This N-channel MOSFET is a voltage-controlled device in contrast to BJT (bipolar junction transistor) that are current-controlled devices.MOSFETs are created to overcome the limitations by FETs like moderate input impedance, high drain resistance, and slower operation. Basic building element of modern electronics, MOSFET is introduced in 1959 in Bell Labs by Mohemed M Atalla and Dawn Kahng.The IRF730 is an n-channel MOSFET where major charge carriers are electrons and current conduction is due to the motion of these electrons in contrast to the p-channel MOSFET where conduction is carried out due to the motion of holes.The gate pin acts like a control valve through which the conduction of current is controlled between two terminals. The current between two drain and source terminals is controlled by the voltage applied at the gate pin. IRF730 MOSFET is a three-terminal device composed of gate (G) drain (D) and source (S).

The MOSFET stands for Metal Oxide Silicon Field Effect Transistor also known as IGFET Insulated Gate Field Effect Transistor that is generated by the controlled oxidation of a semiconductor material like silicon.The IRF730 is an n-channel MOSFET mainly used for switching and amplification applications in the electrical circuits.I suggest you read this post all the way through as I’ll be discussing the complete Introduction to IRF730 covering datasheet, pinout, features, power ratings, equivalent, and applications. It comes with a TO-220 package where the drain-to-source breakdown voltage is 400V and power dissipation is 100W.

The IRF730 is an n-channel MOSFET where major charge carriers are electrons and conduction in the transistor is carried out due to the motion of these electrons. In this post today, I’ll walk you through the Introduction to IRF730.

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